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Order of measuring modulation and analysis of its results

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STUDY OF CHARACTERISTICS OF NONLINEAR RESISTIVE ELEMENTS

Group IAN 209

Yulia Nemyrovets

Purpose of work: to investigate the volt-ampere characteristics of semiconductor diodes and transistors with help of by modeling in the program Electronics Workbench. Investigate the volt-ampere characteristics of nonlinear elements (NOT) connected in series and parallel.

Order of measuring modulation and analysis of its results

1. Investigate nonlinear volt-ampere characteristics of semi-conductor diode 1N4001.

For investigation of reverse VAC branch of semiconductor diode, collect measurement scheme in accordance with Fig. 1.2.

Set the following parameters of measuring devices:

- resistance of ammeter - 1 µOhm;

- resistance of voltmeter - 100 MOhm.

(These parameters are for almost ideal devices).

 

Fig. 1.2

Setting on the voltage source parameters correspondingly to the table 1.1, carry out measurements of the VAC reverse branch of a semiconductor diode 1N4001 and put them to the table. 1.1.

Table 1.1

U,V   0,01 0,1           49,8 49,9 49,95  
I,µA     0,001 0,01 0,099 0,199 0,398 0,49 21,43      

 

For investigation of the direct branch VAC of semiconductor diode, make up measuring scheme in accordance with Fig. 1.3. Set such a parameters of measuring instruments:

- resistance of ammeter - 1 µOhm;

- resistance of voltmeter - 100 MOhm.

 

Fig. 1.3

 

I, µA 0,001 0,01 0,1     102 103 104 105 5*105 106
U, V 0,1001 0,7363 0,892 0,9969 1,099 1,2 1,3 1,403 1,508 1,594 1,645

Setting on the current source, parameters correspondingly to the table. 1.2, make up a measurement of direct branch VAC of semiconductor diode 1N4001 and put them in the table. 1.2.

Table 1.2

 

2. Build a graphics VAC of investigated nonlinear resistive element in the linear and semi-logarithmic scale on a sheet of millimeter paper. Approximate VAC by piece-wise linear and exponential functions. Graphs of approximating functions combine with the measured characteristic. Compare them and make a conclusions.

3. Build graphically VAC of composite nonlinear element, shown in Fig. 1.4, using the graph VAC diode 1N4001. Explain the method of construction.

 

 

 

Fig. 1.4

4. Research the nonlinear VAC of semiconductor bipolar transistor BD240.

For investigation of the input, gate and output characteristics of bipolar transistor build measurement circuit according to Fig. 1.5.

 

Fig. 1.5

Set the following parameters of measuring devices:

- resistance of ammeter - 1 µOhm;

- resistance of voltmeter - 100 MOhm.

4.1. Take the input and passable characteristics of transistor Uk.e= 40 V. Setting on the voltage source Ub parameters correspondingly to the table 1.3, make up measurements of input and passable characteristics of transistor BD240 and put their results into a table. 1.3.

Table 1.3

Ub.e, V 0,4 0,5 0,55 0,60 0,625 0,65 0,675 0,70 0,725 0,75
Ib, µA 0,004 0,005 0,007 0,018 0,037 0,089 0,2230 0,574 1,499 3,93
Ik, mA 0,398                  

 

4.2. Measure the output characteristic of transistor at Ub.e = 650 mV. Setting on the voltage source Uk.e parameters according to table. 1.4, male up measurements of output transistor BD240 characteristic and put their results in table 1.4.

Table 1.4

Uk.e, V 0,1 0,3 1,0 5,0          
Ib, µA 0,260 0,089 0,089 0,089 0,089 0,089 0,088 0,088 0,088
Ik, µA 7,686 8,213 8,221 8,261 8,310 8,409 8,61 8,81 8,90

5. Make graphics of input, passable and output characteristics of bipolar transistor BD240 on one sheet of millimeter paper. Approximate the passable characteristic of piecewise linear and exponential functions. Combine graphs of approximating functions with the measured characteristic. Compare them and make conclusions.

6. Explore nonlinear volt-ampere characteristics of field-effect transistor BF244A.

For investigation of stock-gate characteristic of field-effect transistor, build measuring scheme according to Fig. 1.6. Set such parameters of measuring devices:

- resistance of ammeter - 1 µOhm;

- resistance of voltmeter - 100 MOhm.

Take stock-gate characteristic of transistor at Uc.i= 40 V. Setting on the voltage source Us parameters according to table 1.5, make measurements of stock-gate characteristic of field-effect transistor BF244A and put their results into a table. 1.5.

 


Fig. 1.6

 

Table 1.5

Еc.i= 40 V  
Us, V -3,0 -2,0 -1,75 -1,5 -1,25 -1,0 -0.75 -0,5 -0,25  
Is, mA 44,6* 103 42,67* 103 42,18* 103 41,68* 103 41,19* 103 40,7* 103 40,23* 103 39,8* 103 39,54* 103 39,29* 103

 

0,25 0,5 0,755 1,0 1,25 1,5 1,75 2,0 2,25 2,5 2,75 3,0
39,04* 103 38,79* 103 38,53* 103 38,29* 103 38,04* 103 37,79* 103 37,54* 103 37,29* 103 37,04* 103 36,79* 103 36,54* 103 36,29* 103

 

 

Repeat the measurements at Uc.i = 60 V. The results put into table. 1.6.

 

Table 1.6

Еc.i= 60 V  
Us, V -3,0 -2,0 -1,75 -1,5 -1,25 -1,0 -0.75 -0,5 -0,25  
Is, mA 64,65 * 103 62,66* 103 62,17* 103 61,67* 103 61,18* 103 60,69* 103 60,21* 103 59,79* 103 59,53* 103 59,28* 103

 

 

0,25 0,5 0,755 1,0 1,25 1,5 1,75 2,0 2,25 2,5 2,75 3,0
59,03* 103 58,78* 103 58,52* 103 58,28* 103 58,02* 103 57,77* 103 57,52* 103 57,27* 103 57,02* 103 56,78* 103 56,53* 103 56,28* 103

 

Measure the stock transistor characteristic at Us.i= 0,5 V. Setting on the source of voltage Uc.i parameters corresponding to the table. 1.7, make measurements of stock characteristic of field-effect transistor BF244A and put their results into a table. 1.7.

Table 1.7

Uc.i, V 0,1                
Ic, mA 0,335 12,67              

 

7. Build the stock and stock-gate characteristic graphs of field-effect transistor BF244A on one sheet of paper.

Approximate the stock-gate characteristic of field-effect transistor by polynomial function of 2, 5 and 7-th order.

Graph of approximating functions combine with the measured characteristic.

,mA                        
,A 1.03 4.64 6.82 10.0 14.7 21.6 31.6 46.1 67.1 97.2    

 


The extreme point:10mA


U,mV 620 630 640 650 660 670 680
I,mA 9.61 12.14 19.47 31.6 48.53 70.26 96.76

U,mV              
10.02 14.87 21.65 31.51 45.87 66.77 97.2

 

 

Conclusions: During this laboratory work I investigate the volt-ampere characteristics of semiconductor diodes and transistors with help of by modeling in the program Electronics Workbench. Also I investigate the volt-ampere characteristics of nonlinear elements (NOT) connected in series and parallel.

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