Tech Area / Field. Brief Description of TechnologyWe have developed a technology of direct formation of nanoscale objects (quantum dots and quantum wires) during molecular beam

• INF-ELE: Information and Communications / Microelectronics and Optoelectronics
• INS-MEA: Instrumentation / Measuring Instruments
• PHY-SSP: Physics / Solid State Physics

Brief Description of Technology
We have developed a technology of direct formation of nanoscale objects (quantum dots and quantum wires) during molecular beam epitaxy (MBE) and related techniques in the highly mismatched InGaAs/GaAs heteroepitaxial system [1-5]. This technological process allows us to obtain regular arrays of three-dimensional crystallite islands with a lateral size of 10-20 nm and a height of 3-6 nm of different geometrical shapes or wire-like structures with the corrugation period of 20-50 nm. We have proposed and developed microscopic theory [6, 7], computer simulation programs [8] and experimental techniques [4, 9] to create nanostructures with different morphological characteristics by selecting appropriate growth regimes. An our institute we have all the instrumentation and experimental methods required for the growth and diagnostics of nanostructures, including an MBE machine, scanning tunneling microscopes and photoluminescence equipment.

We have developed a technology for the production of micro analysis systems (chip analyzers) for the analysis of complex multicomponent solutions. This technology includes computer design of manifolds, equipment for the production of silicon and GaAs micromachined substrates and their connection, instrumentation for the use of chips in a chromatographical regime (electroosmosis pump connected with the chip channels, stable power source with ms range switching and laser-induced fluorescence detector). The laboratory of Prof. B.G. Belenkii has deep knowledge in the field of capillary electrophoresis and electrochromatography in open and packed capillaries [10].

At the moment, we are working on a way to use the advantages of these two methods in one chromatographic system.

Legal Aspects
At the moment, there are no patents in this field.

Special Facilities in Use and Their Specifications
None in this research.

Scientific Papers
1. G.M.Guryanov, G.E.Cirlin, V.N.Petrov, N.K.Polyakov, A.O.Golubok, S.Ya.Tipissev, E.P.Musikhina, V.B.Gubanov, Yu.B.Samsonenko, and N.N.Ledentsov. Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy. Surf. Sci., 1995, v.331-333, p.414-418.

2. G.E.Cirlin, G.M.Guryanov, A.O.Golubok, S.Ya.Tipissev, N.N.Ledentsov, P.S.Kop'ev, M.Grundmann, and D.Bimberg. Ordering phenomena in InAs strained layer morphological transformation on GaAs(100) surface. Appl. Phys. Lett. 1995, v.67, p.97-99.

3. G.M.Guryanov, G.E.Cirlin, V.N.Petrov, N.K.Polyakov, A.O.Golubok, S.Ya.Tipissev, V.B.Gubanov, Yu.B.Samsonenko, N.N.Ledentsov, V.A.Shchukin, M.Grundmann, D.Bimberg, and Zh.I.Alferov. STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer molecular-beam epitaxial techniques. Surf. Sci., 1996, v.352-354, p.651-655.

4. G.M.Guryanov, G.E.Cirlin, A.O.Golubok, S.Ya.Tipissev, N.N.Ledentsov, V.A.Shchukin, M.Grundmann, D.Bimberg, and Zh.I.Alferov. An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs (100) during submonolayer molecular-beam epitaxy. Surf. Sci., 1996, v. 352-354, p. 646-650.

5. G.E.Cirlin, V.N.Petrov, A.O.Golubok, S.Ya.Tipissev, V.G.Dubrovskii, G.M.Guryanov, N.N.Ledentsov, and D.Bimberg. Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces. Surf. Sci., 1997, v. 377-379, p. 895-898.

6. V.G.Dubrovskii. Nucleation and Growth of an Adsorbed Layer: Self-Consistent Approach Based on the Kolmogoroff-Avrami Model. Physica Status Solidi B, 1992, v. 171, pp. 345-356.

7. V.G.Dubrovskii, G.E.Cirlin, V.V.Kozachek, and V.V.Mareev. Self-organization in two- and three- dimensional adsorbates with attractive lateral interactions. Czech. J. Phys., 1997, v. 47(4) p. 389-396.

8. A.G.Filaretov and G.E.Tsyrlin. Effect of conditions during growth of semiconductor binary III-V compounds on the surface front in molecular beam and migration-enhanced epitaxy. Statistical simulation. Sov.Phys.Solid State, 1991, v. 33, pp. 751-755.

9. G.E.Cirlin, V.N.Petrov, V.G.Dubrovskii, A.O.Golubok, S.Ya.Tipissev, G.M.Guryanov, M.V.Maximov, N.N.Ledentsov, and D.Bimberg. Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams. Czech. J. Phys., 1997, v. 47(4) pp. 379-384.

10. T.A.Zimina, R.M.Smith, and P.Myers. Comparison of ODS-modified silica gels as stationary phases for electrochromotography in packed capillaries. J. Chromatorg. A, 1997, v. 758, p. 191-197.

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