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Integrated Injection Logic

Transistors as Switches | Basic Types of Bipolar Transistor | L. Junction Field-Effect Transistors | Depletion-Type MOS-Transistor | Enhancement-Type MOS-Transistors | Diod Thyristor | Triode Thyristor | The Unijunction Transistor | Phototransistors | Light-Emitting Diodes |


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Integrated injection logic (I2L) offer a number of advantages over conventional ICs. For one thing, they permit a very high scale of integration. For another, the supply voltage may be as low as 0.5 to 0.9 V. A mere 10-12 J of energy is enough to do the necessary switching.

Figure 8.10a shows the structure of an n1-p2-n2 planar I2L transistor which is a unit cell of an I2L chip. The n1 -type substrate in this transistor acts as an collector. In contrast to conventional planar transistor, the device in our case is used in the inverse mode. In addition to the transistor, there is also a p1 -region called the injector(I). Together with the n1 -type collector and the p2 -type base of the n1-p2-n2 transistor (VT2), the injector makes up a pi-nl-p2 transistor (VT1), where the injector operates as an emitter.

Fig. 8.10. Planar I2L transistor

 

Let a forward voltage be applied to the injector junction from a supply source, EI. The applied forward voltage causes holes to move from the injector into the n1 -type collector region, while the excess charge due to holes injected there under the influence of EI is neutralized by in-coming electrons. The excess electrons and holes diffuse through the region n1 to the n1 - p2 collector junction which is enriched with charge carriers so that its potential barrier is brought down, and its resistance decreases. Holes and electrons diffuse farther through the p2 -type base to the p2-n2 emitter junction and likewise reduce its potential barrier and resistance.

In this way, the resistance of both junctions in the n1-p2-n2 transistor is reduced, and the transistor VT2 operates close to saturation, that is, similarly to a closed switch. If we now short-circuit the base to the emitter by closing the switch S, the voltage across the collector junction will fall to zero, no more carriers will be able to arrive at the р2 — п2 emitterjunction, and its resistance will go up abruptly. Thus, the transistor VT2 will move to a state close to cutoff, and this corresponds to an open switch.

 


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