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Transistors as Switches

The Capacitances of a Semiconductor Diode | Semiconductor Diodes as Rectifiers | Structures of Semiconductor Diodes | The Tunnel and Inversed Diodes | Microwave Semiconductor Diodes | Physical Processes in a Transistor | The Basic Circuit Configurations of Transistors | Models of Transistors | Bias Supply and Temperature Compensation for Transistors | Amplification by a Transistor |


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  1. A) transistors
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  3. Bipolar Junction Transistors
  4. Enhancement-Type MOS-Transistors
  5. From Tubes to Transistors
  6. L. Junction Field-Effect Transistors
  7. Models of Transistors

We will examine a switching transistorby reference to its output characteristics for the CE circuit configuration. Let the collector lead contain a load resistor RC (Fig. 4.21).

Fig. 4.21. Transistor in pulse circuit CE

The applicable load line appears in Fig. 4.22. Before an input current or voltage pulse arrives at the input of this circuit, the transistor is turned off (it is said to be in the OFF state or at cutoff ). This condition corresponds to point Q1. A small current ICE0 is now flowing in the collector circuit and so this circuit may be assumed to be open. Nearly all of the supply voltage EC is impressed on the transistor.

When we apply a current pulse IBmax to the input, the transistor is moved into the saturation regionand is operating at point Q2. As a result, there appears a collector current pulse ICmax very close in magnitude to EC /RC. Sometimes, it is called the saturation current. At saturation, a transistor is in effect a closed switch and nearly all of EC is dropped across RC , with a very small remainder, called the saturation voltage UCEsat, left across the transistor; its value is a few tenths of a volt.

Fig. 4.22. Finding transistor parameters in pulsed work from output characteristics

 

The maximum attainable value of collector current pulse is:

ICmax ≈ ЕC /RC .

In addition to ICmax, IBmax and UCE sat, the switching mode of operation is characterized by the force current gain В which, in contrast to the beta current gain, is defined in terms of the ratio between the currents at point Q2:

B ≈ ICmax / IBmax <β.

Fig. 4.23 shows plots of an input current pulse which has a rectangular waveform and an output current pulse for a transistor with the CE connection.

 

Fig. 4.23. Pulse waveform by a transistor

 

Switching transistors must have small junction capacitances and a narrow base.


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