Студопедия
Случайная страница | ТОМ-1 | ТОМ-2 | ТОМ-3
АрхитектураБиологияГеографияДругоеИностранные языки
ИнформатикаИсторияКультураЛитератураМатематика
МедицинаМеханикаОбразованиеОхрана трудаПедагогика
ПолитикаПравоПрограммированиеПсихологияРелигия
СоциологияСпортСтроительствоФизикаФилософия
ФинансыХимияЭкологияЭкономикаЭлектроника

Electrons in Solids

Extrinsic Conduction | Diffusion Currents in Semiconductors | The Capacitances of a Semiconductor Diode | Semiconductor Diodes as Rectifiers | Structures of Semiconductor Diodes | The Tunnel and Inversed Diodes | Microwave Semiconductor Diodes | Physical Processes in a Transistor | The Basic Circuit Configurations of Transistors | Models of Transistors |


Читайте также:
  1. DIFFERENCE IN PROPERTIES OF SOLIDS, LIQUIDS AND GASES
  2. Fig. 3.I. Shells in which electrons rotate.
  3. Full Title Deformation Polishing and Deformation Welding of Solids Tech Area / Field

Electric Conduction in Semiconductors

Electrons in Solids

It is proved in physics that electrons in a solid cannot possess just any arbitrary energy. Each electron can only have a particular discrete energy called an energy level. The distribution of electrons among the ener­gy levels is usually shown on a diagram such as appears in Fig. 1.1. The horizontal lines drawn across the energy diagram represent each the energy E that an electron residing at that level has.

Fig.1.1. Energy-level (or energy-band) diagram of (a) a metal and (b) a semiconductors and dielectric

 

The electrons occupying the external shell of an atom fill a number of energy levels that form what is known as the valence band. Metals and semiconductors have a great number of electrons occupying the higher ener­gy levels. These levels constitute the conduction band.

The conduction band is separated from the valence band by what is called a 'band gap', that is, one where no electrons can reside (Fig. 1.lb). The width, of the band gap Eg, or the difference in energy between the top level of the valence band EV and the bottom level of the conduction band EC, is a few electron-volts.

At this writing, semiconductor devices and IC are most often fabricated from silicon (Si) and germanium (Ge) both of which are four-valent sub­stances. The lattice of silicon or germanium consists of atoms bound together by valence electrons. This type of linkage is known as the covalent bond and is shown in Fig. 1.2. As is seen, each atom of a pair contributes one electron to the shared pair that constitutes an ordinary chemical bond.

 

Fig1.2. Covalent bonding between silicon atoms

 


Дата добавления: 2015-11-14; просмотров: 104 | Нарушение авторских прав


<== предыдущая страница | следующая страница ==>
Civil and criminal penalties| Intrinsic Conduction

mybiblioteka.su - 2015-2024 год. (0.007 сек.)