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Structures of Semiconductor Diodes

Electrons in Solids | Intrinsic Conduction | Extrinsic Conduction | Diffusion Currents in Semiconductors | The Capacitances of a Semiconductor Diode | Microwave Semiconductor Diodes | Physical Processes in a Transistor | The Basic Circuit Configurations of Transistors | Models of Transistors | Bias Supply and Temperature Compensation for Transistors |


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All semiconductor diodes are classed into the point-contact type and the junction type.

The arrangement of a point-contact diode is shown in Fig. 3.11. It has a thin pointed wire to which a desired impurity is applied and then is welded by a current pulse (1A/μs) to a wafer of semiconductor.

Fig. 3.11. Structure of a point-contact crystal diode

Junction diodes are mainly fabricated by alloying ( or fusion) and diffusion (Fig. 3.12). The alloying process is a fabrication technique in which a small button of indium is fused at about 500°C into an n -type germanium wafer.

Fig. 3.12. P-N junction diodes manufactured by (a) alloying and (b) diffusion

Zener Diodes

Semiconductor diodes may be operated under conditions of an electric break­down. There are special diodes, sometimes called Zener diodes, oftenused for voltage stabilization.

Figure 3.13 shows the current-voltage characteristic of a typical break­down diode under reverse bias. As is seen, when the diode is operating in the avalanche break­down region (the voltage regulation mode), the output voltage changes very little.

 

Fig. 3.13. Reverse current-voltage characteristic of a silicon breakdown diode

Figure 3.14 shows a simple circuit using a silicon Zener diode. The load is placed in shunt with the diode. Therefore, in the breakdown region when the voltage across the diode re­mains nearly constant, the same voltage will exist across the load. If the source of voltage E is unstable, any changes in E will almost comple­tely be absorbed by a limiting resistor, Rlim.

Fig. 3.14. Connection of a Zener diode in a circuit

 

The value of Rlim may be found by the following equation;

Rlim = (Eav - UB)/(IV + IL ),

How well voltage regulation is performed is stated in terms of the voltage regulation ratio (or the stabilization factor), Kstab. For the simple circuit shown in Fig. 3.14 we may write:

Kstab = (∆E/E)/(∆UB/UB) = >1.

Varactors

A varactor is a p-n junction semi­conductor diode which utilizes variations in the junction capacitance with reverse bias. Varactors are variable capacitors whose capaci­tance is controlled electrically.

Varactors are mainly used as tuning elements in resonant (tuned) circuits (Fig. 3.15) and some specialized devices, such as parametric amplifiers.

Fig. 3.15. Connection of a varactor in a resonant circuit as a variable capacitor

 


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